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Master thesis: Low-temperature epitaxy of group III nitrides using alternative precursors

About group III nitrides

In 2014, the Nobel prize of physics was awarded to the discovery of blue light emitting diodes. These diodes were manufactured in the Al-Ga-In-N material system and are today the base element for white LEDs, which deeply penetrates into innovative illumination technology in homes, cars, advertisement, industry and communication devices due to their high brightness and low energy consumption. However, the fabrication of these devices is based on chemical gas phase deposition technology taking place at elevated temperatures. Next to high costs of this high temperature process, these temperatures limit also the flexibility in composition in particular in GaInN compounds. Using the metalorganic vapor phase epitaxy (MOVPE) available at PGI-9 we anticipate to explore the possibility to overcome this restrictions by using novel alternative gas sources with the potential to substantially lower the deposition temperatures.

Project Description:

In this project you will explore the parameter space for the growth of high quality group-III nitrides by MOVPE. Special emphasis will be put on the possibility to substantially lower the deposition temperature by using a new process based on alternative sources for the group III as well as for the nitrogen compound.
The material will be probed using different techniques, like X-ray diffraction, Rutherford backscattering, transmission electron microscopy and photoluminescence to analyze their structural and optical property in order to determine their suitability for device applications. The results will be compared to films grown by conventional technology. In particular the incorporation of Carbon, which is a typical obstacle in MOVPE grown group-III nitrides grown by conventional MOVPE, will be investigated by mass spectrometry as well as by electrical characterization using Hall measurements.

What you will learn:

You will learn how to fabricate and analyze semiconductor materials using state of the art technology. In this interdisciplinary project you will be able to strengthen your skills in chemistry of processes, physics of material characterization and semiconductor device physics and engineering.

Who can apply:

Students with a background in physics, chemistry, electrical engineering or material science are welcomed.

Contact:
Prof. Dr. Detlev Grützmacher
Peter Grünberg Institut PGI-9, Gebäude 02.11, Raum 211
Tel.Nr.: +49 (0)2461 61 2340
d.gruetzmacher@fz-juelich.de


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