2-Dimensional Materials
Monolayers (ML) of group IV-B transition metal dichalcogenides (TMDs) exhibit remarkable optical properties. These properties include very large exciton binding energies of several hundreds of meV, high magnetic moments and spin and valley pseudospin degrees of freedom.
Tight exciton confinement in monolayers results in fast spontaneous radiative recombination. Optical selection rules make it possible to address valley and spin degrees of freedom using polarization of light. Due to their geometry, ML TMDs can be incorporated easily into optical microcavities, photonic circuits, and flexible electronics. As a result, they have become the materials system of choice for spin-valley optoelectronics, where both spin and valley degrees of freedom are considered to be information carriers.
Here, we aim to develop photon sources; light emitting diodes based on TMDs and establish methods to confine excitons and carriers in a controlled way.
